Electronic Properties of the Insulating Half-Filled Hubbard Model

N. Bulut, D. J. Scalapino, and S. R. White
Phys. Rev. Lett. 73, 748 – Published 1 August 1994
PDFExport Citation

Abstract

Monte Carlo results for the frequency dependent conductivity σ1(ω), the angular resolved photoemission spectral weight A(p,ω), and the electron momentum distribution np are calculated for a half-filled Hubbard model with the on-site Coulomb interaction U equal to the bandwidth 8t. We find that even for U=8t, a spin-density-wave approximation provides a sensible description of this data and hence a useful picture of the electronic degrees of freedom in the insulating state.

  • Received 4 March 1994

DOI:https://doi.org/10.1103/PhysRevLett.73.748

©1994 American Physical Society

Authors & Affiliations

N. Bulut1, D. J. Scalapino2, and S. R. White3

  • 1Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080
  • 2Department of Physics, University of California at Santa Barbara, Santa Barbara, California 93106-9530
  • 3Department of Physics, University of California at Irvine, Irvine, California 92717-4575

References (Subscription Required)

Click to Expand
Issue

Vol. 73, Iss. 5 — 1 August 1994

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×