Abstract
We report a new technique for detecting adsorbates in real time during plasma processing. During etching of Si(100) in a plasma, pulsed XeCl excimer laser irradiation of the surface induces thermal desorption of (x=0–4). Desorbing products are detected by either laser-induced fluorescence (for SiCl) excited by the same laser pulse, or by plasma-induced emission (for SiCl and Si) from electron impact excitation. The technique has a time resolution of <0.1s and submonolayer sensitivity, and should be applicable to processes at high ambient pressure.
- Received 10 January 1994
DOI:https://doi.org/10.1103/PhysRevLett.72.2801
©1994 American Physical Society