Electron tunneling determination of the order-parameter amplitude at the superconductor-insulator transition in 2D

J. M. Valles, Jr., R. C. Dynes, and J. P. Garno
Phys. Rev. Lett. 69, 3567 – Published 14 December 1992
PDFExport Citation

Abstract

We have investigated the behavior of the superconducting energy gap Δ in ultrathin films of quench condensed Bi near the superconductor-insulator (SI) transition. From electron tunneling measurements on these films, we conclude that Δ becomes very small and approaches zero at the SI transition. We studied high-sheet-resistance films with Tc0’s as low as 0.19 K. This is a factor of 40 lower than the low-sheet-resistance film Tc0 of 6.4 K.

  • Received 23 April 1992

DOI:https://doi.org/10.1103/PhysRevLett.69.3567

©1992 American Physical Society

Authors & Affiliations

J. M. Valles, Jr., R. C. Dynes, and J. P. Garno

  • Materials Science Institute, University of Oregon, Eugene, Oregon 97403
  • Department of Physics, University of California at San Diego, La Jolla, California 92093
  • AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974

References (Subscription Required)

Click to Expand
Issue

Vol. 69, Iss. 24 — 14 December 1992

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×