Conductance-noise power fluctuations in hydrogenated amorphous silicon

C. E. Parman, N. E. Israeloff, and J. Kakalios
Phys. Rev. Lett. 69, 1097 – Published 17 August 1992
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Abstract

The power spectra of the 1/f noise in n-type-doped hydrogenated amorphous silicon (a-Si:H) are themselves time dependent. The noise power changes both in magnitude and as a function of frequency, reflecting a modulation of the properties of the fluctuators responsible for the current noise. Slow variations of the noise are strongly correlated over a broad range of frequencies. Spectral analysis of these noise power fluctuations, termed second spectra, also shows an approximate 1/f spectral slope, that is, the 1/f noise has 1/f noise. These results indicate that highly cooperative interactions exist between the fluctuators.

  • Received 19 May 1992

DOI:https://doi.org/10.1103/PhysRevLett.69.1097

©1992 American Physical Society

Authors & Affiliations

C. E. Parman, N. E. Israeloff, and J. Kakalios

  • School of Physics and Astronomy, The University of Minnesota, Minneapolis, Minnesota 55455

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Issue

Vol. 69, Iss. 7 — 17 August 1992

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