Single-electron capacitance spectroscopy of discrete quantum levels

R. C. Ashoori, H. L. Stormer, J. S. Weiner, L. N. Pfeiffer, S. J. Pearton, K. W. Baldwin, and K. W. West
Phys. Rev. Lett. 68, 3088 – Published 18 May 1992
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Abstract

We observe the capacitance signal resulting from single electrons tunneling into discrete quantum levels. The electrons tunnel between a metallic layer and confined states of a single disk in a microscopic capacitor fabricated in GaAs. Charge transfer occurs only for bias voltages at which a quantum level resonates with the Fermi energy of the metallic layer. This creates a sequence of distinct capacitance peaks whose bias positions directly reflect the electronic spectrum of the confined structure. From the magnetic field evolution of the spectrum, we deduce the nature of the bound states.

  • Received 2 March 1992

DOI:https://doi.org/10.1103/PhysRevLett.68.3088

©1992 American Physical Society

Authors & Affiliations

R. C. Ashoori, H. L. Stormer, J. S. Weiner, L. N. Pfeiffer, S. J. Pearton, K. W. Baldwin, and K. W. West

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Issue

Vol. 68, Iss. 20 — 18 May 1992

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