Morphological instability in epitaxially strained dislocation-free solid films

B. J. Spencer, P. W. Voorhees, and S. H. Davis
Phys. Rev. Lett. 67, 3696 – Published 23 December 1991
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Abstract

We perform the first analysis of the morphological instability of a growing epitaxially strained dislocation-free olid film. We derive an evolution equation for the film surface based on surface diffusion driven by a stress-dependent chemical potential. From the time-dependent linear stability problem we determine the conditions for which a growing film is unstable. Our results reveal that the critical film thickness for instability depends on the growth rate of the film itself, and that the instability we describe exhibits many of the observed features of the onset of the ‘‘island instability.’’

  • Received 16 August 1991

DOI:https://doi.org/10.1103/PhysRevLett.67.3696

©1991 American Physical Society

Authors & Affiliations

B. J. Spencer, P. W. Voorhees, and S. H. Davis

  • Department of Engineering Sciences and Applied Mathematics, Northwestern University, Evanston, Illinois 60208
  • Department of Materials Science Engineering, Northwestern University, Evanston Illinois 60208

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Issue

Vol. 67, Iss. 26 — 23 December 1991

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