Excitonic insulator phase in TmSe0.45Te0.55

B. Bucher, P. Steiner, and P. Wachter
Phys. Rev. Lett. 67, 2717 – Published 4 November 1991
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Abstract

We measured the Hall constant, resistivity, and magnetoresistance of the narrow-band-gap semiconductor TmSe0.45Te0.55 at pressures up to 17 kbar and down to 4 K. As the band gap can be closed with pressure, a semiconductor-metal transition occurs. Above 5 kbar, when the gap is partially closed, a transition to a more insulating phase is detected. The Hall effect at low temperature and high pressure reveals that the resistivity increase is caused by a condensation of free carriers, which strongly supports this as the first observation of the excitonic insulator ground state of condensed matter.

  • Received 22 July 1991

DOI:https://doi.org/10.1103/PhysRevLett.67.2717

©1991 American Physical Society

Authors & Affiliations

B. Bucher, P. Steiner, and P. Wachter

  • Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule, CH-8093 Zürich, Switzerland

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Vol. 67, Iss. 19 — 4 November 1991

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