Geometric and electronic properties of Cs structures on III-V (110) surfaces: From 1D and 2D insulators to 3D metals

L. J. Whitman, Joseph A. Stroscio, R. A. Dragoset, and R. J. Celotta
Phys. Rev. Lett. 66, 1338 – Published 11 March 1991
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Abstract

We report the structural and electronic properties of Cs adsorbed on room-temperature GaAs and InSb (110) surfaces as observed with scanning tunneling microscopy. Cs initially forms long one-dimensional (1D) zigzag chains on both surfaces. Additional Cs adsorption on GaAs(110) results in the formation of a 2D overlayer consisting of five-atom Cs polygons arranged in c(4×4) superlattice. The tunneling gap measured over these insulating structures narrows with the transition from 1D to 2D, with metallic characteristics observed following saturation with a second Cs overlayer.

  • Received 10 October 1990

DOI:https://doi.org/10.1103/PhysRevLett.66.1338

©1991 American Physical Society

Authors & Affiliations

L. J. Whitman, Joseph A. Stroscio, R. A. Dragoset, and R. J. Celotta

  • Electron and Optical Physics Division, National Institute of Standards Technology, Gaithersburg, Maryland 20899

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Vol. 66, Iss. 10 — 11 March 1991

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