Abstract
A new resistance resonance effect based on the quantum-mechanical delocalization of electrons in a symmetric-double-well potential is presented. We show that changing the symmetry of the potential profile gives rise to a resistance peak if the transport properties of the two wells are different. The proposed effect is demonstrated experimentally in semiconductor heterostructures.
- Received 29 June 1990
DOI:https://doi.org/10.1103/PhysRevLett.65.1929
©1990 American Physical Society
