Chemical Mapping of Semiconductor Interfaces at Near-Atomic Resolution

A. Ourmazd, D. W. Taylor, J. Cunningham, and C. W. Tu
Phys. Rev. Lett. 62, 933 – Published 20 February 1989
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Abstract

We combine chemical lattice imaging with digital pattern recognition to map, at near-atomic resolution, the compositional change across GaAs/AlGaAs interfaces of the highest optical quality. These maps quantify the information content of each unit cell of the lattice image. Our results show that state-of-the-art GaAs/AlGaAs interfaces contain substantial atomic roughness on scales finer than suggested by optical measurements.

  • Received 15 July 1988

DOI:https://doi.org/10.1103/PhysRevLett.62.933

©1989 American Physical Society

Authors & Affiliations

A. Ourmazd, D. W. Taylor, and J. Cunningham

  • AT&T Bell Laboratories, Holmdel, New Jersey 07733

C. W. Tu

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

Comments & Replies

Comment on ‘‘Chemical mapping of semiconductor interfaces at near-atomic resolution’’

B. Deveaud, B. Guenais, A. Poudoulec, A. Regreny, and C. d’Anterroches
Phys. Rev. Lett. 65, 2317 (1990)

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Vol. 62, Iss. 8 — 20 February 1989

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