Abstract
The formation energies of single- and double-layer steps on Si(001) surfaces were calculated. For each case, two configurations with surface dimerization axes normal or parallel to the step edge were examined. Single-layer steps are found to have the lowest formation energy. Bilayer steps become energetically more favorable on surfaces misoriented towards [110] or [1¯10] axes where low- and high-energy single-layer steps are forced to alternate with each other.
- Received 15 June 1987
DOI:https://doi.org/10.1103/PhysRevLett.59.1691
©1987 American Physical Society
