Abstract
We report the first voltage-dependent scanning tunneling microscope images of a compound semiconductor surface, GaAs(110). Images show either only Ga atoms, or only As atoms, depending on the bias voltage. By combining voltage-dependent images with theoretical calculations, we quantitatively determine surface structural parameters which cannot be inferred from the images alone.
- Received 5 December 1986
DOI:https://doi.org/10.1103/PhysRevLett.58.1192
©1987 American Physical Society