Abstract
The (1¯ 1¯ 1¯) surface of GaAs exhibits three stable reconstructions. Two are (2×2), As stabilized and Ga stabilized respectively, and the third is (√19 × √19 ). Transitions between these structures are obtained by variation of the experimental conditions. We propose new models for all of the above reconstructions, based on ab initio total-energy calculations and experimental information regarding surface composition.
- Received 27 March 1986
DOI:https://doi.org/10.1103/PhysRevLett.57.106
©1986 American Physical Society