Abstract
Interface compound formation at Cu-In films is studied with the perturbed angular correlation method using radioactive probe atoms. The growth of a Cu intermetallic interface phase is observed with a sensitivity on the scale of atomic distances in the temperature range between 220 and 340 K. This new phase is characterized by an electric field gradient (at K) with V/ and . The activation energy of phase formation for Cu was determined to be 0.42(2) eV.
- Received 28 January 1985
DOI:https://doi.org/10.1103/PhysRevLett.54.2371
©1985 American Physical Society