Abstract
Luminescence and Raman measurements on a new type of superlattice consisting of - and -type doped GaAs layers grown by molecular-beam epitaxy confirm crucial predictions of theory. A strongly tunable energy gap is found in luminescence. Raman experiments provide the first observation of electronic subbands in purely space-charge-induced quantum wells. A combined analysis of the luminescence and Raman data yields excellent agreement with self-consistent subband calculations based only on the design parameters of the sample.
- Received 16 June 1981
DOI:https://doi.org/10.1103/PhysRevLett.47.864
©1981 American Physical Society