Abstract
Extension of analyses of low-energy-electron-diffraction intensities to encompass structure determination of low-index semiconductor surfaces reveals that GaAs(110) is reconstructed. The As atoms protrude from the surface whereas the Ga atoms are displaced inward such that no nearest-neighbor bond lengths are altered.
- Received 24 December 1975
DOI:https://doi.org/10.1103/PhysRevLett.36.1058
©1976 American Physical Society