Decay Kinetics of Electron-Hole-Drop and Free-Exciton Luminescence in Ge: Evidence for Large Drops

R. M. Westervelt, T. K. Lo, J. L. Staehli, and C. D. Jeffries
Phys. Rev. Lett. 32, 1051 – Published 13 May 1974; Erratum Phys. Rev. Lett. 32, 1331 (1974)
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Abstract

Following pulsed laser excitation of Ge, we observe both the free-exciton (FE) and electron-hole-drop (EHD) luminescence decay. The kinetics are in excellent agreement with exact numerical solutions of the rate equations of Pokrovskii and Hensel, Philips, and Rice, yielding EHD and FE total lifetimes 35.6 ± 0.5 and 7.7 ± 0.5 μ sec, respectively, the EHD radiative enhancement factor ρ=5.1, and values of the thermionic emission and backflow coefficients. The data suggest the production of EHD of diameter ∼ 0.4 mm.

  • Received 11 March 1974

DOI:https://doi.org/10.1103/PhysRevLett.32.1051

©1974 American Physical Society

Erratum

Decay Kinetics of Electron-Hole-Drop and Free-Exciton Luminescence in Ge: Evidence for Large Drops.

R. M. Westervelt, T. K. Lo, J. L. Staehli, and C. D. Jeffries
Phys. Rev. Lett. 32, 1331 (1974)

Authors & Affiliations

R. M. Westervelt, T. K. Lo, J. L. Staehli*, and C. D. Jeffries

  • Physics Department, University of California, Berkeley, California 94720

  • *Postdoctoral Fellow of the Schweizerischer Nationalfonds.

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Vol. 32, Iss. 19 — 13 May 1974

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