Abstract
Drift mobility and conductivity measurements were made between 290 and 85°K on amorphous silicon specimens prepared by glow-discharge decomposition of silane. The results suggest that excess electrons drift in the extended states with a mobility of about 10 . At lower temperatures, phonon-assisted hopping occurs through localized states occupying a range of 0.2 eV below the extended states. Conductivity results also suggest hopping transport near the Fermi energy.
- Received 25 May 1970
DOI:https://doi.org/10.1103/PhysRevLett.25.509
©1970 American Physical Society