Abstract
The excess tunneling current due to electron-surface-plasmon interactions in semiconductor-metal tunnel junctions is calculated. The expression for the second derivative of this excess current, which corresponds to structure in as an increase in conductance at bias voltages near the surface plasmon energy in the semiconductor, agrees with experiment both in magnitude and line shape.
- Received 25 April 1969
DOI:https://doi.org/10.1103/PhysRevLett.22.1375
©1969 American Physical Society