Abstract
Although much effort has been made to explore quantum anomalous Hall effect (QAHE) in both theory and experiment, the QAHE systems with tunable Chern numbers are yet limited. Here, we theoretically propose that and , monolayer transitional metal oxides, can realize QAHE with tunable Chern numbers via manipulating their magnetization orientations. When the magnetization lies in the plane and all mirror symmetries are broken, the low-Chern-number (i.e., ) phase emerges. When the magnetization exhibits nonzero -direction component, the system enters the high-Chern-number (i.e., ) phase, even in the presence of canted magnetization. The global band gap can approach the room-temperature energy scale in monolayer (23.4 meV), when the magnetization is aligned to direction. By using Wannier-based tight-binding model, we establish the phase diagram of magnetization induced topological phase transition. Our work provides a high-temperature QAHE system with tunable Chern number for the practical electronic application.
- Received 9 February 2022
- Revised 6 May 2022
- Accepted 27 June 2022
DOI:https://doi.org/10.1103/PhysRevLett.129.036801
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