Dual-Scale Stick-Slip Friction on Graphene/hBN Moiré Superlattice Structure

Shuai Zhang, Quanzhou Yao, Lingxiu Chen, Chengxin Jiang, Tianbao Ma, Haomin Wang, Xi-Qiao Feng, and Qunyang Li
Phys. Rev. Lett. 128, 226101 – Published 2 June 2022
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Abstract

Using atomic force microscopy, we have shown that friction on graphene/hBN superlattice structures may exhibit unusual moiré-scale stick slip in addition to the regular ones observed at the atomic scale. Such dual-scale slip instability will lead to unique length-scale dependent energy dissipation when the different slip mechanisms are sequentially activated. Assisted by an improved theoretical model and comparative experiments, we find that accumulation and unstable release of the in-plane strain of the graphene layer is the key mechanism underlying the moiré-scale behavior. This work highlights the distinct role of the internal state of the van der Waals interfaces in determining the rich dynamics and energy dissipation of layer-structured materials.

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  • Received 27 October 2021
  • Revised 22 January 2022
  • Accepted 6 May 2022

DOI:https://doi.org/10.1103/PhysRevLett.128.226101

© 2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Shuai Zhang1,2, Quanzhou Yao1,2, Lingxiu Chen3, Chengxin Jiang4,5, Tianbao Ma2, Haomin Wang4,*, Xi-Qiao Feng1,2, and Qunyang Li1,2,†

  • 1Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
  • 2State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China
  • 3School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China
  • 4State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 5School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

  • *To whom all correspondence should be addressed. hmwang@mail.sim.ac.cn
  • To whom all correspondence should be addressed. qunyang@tsinghua.edu.cn

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Issue

Vol. 128, Iss. 22 — 3 June 2022

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