• Featured in Physics
  • Editors' Suggestion

Parametric Amplifiers Based on Quantum Dots

Laurence Cochrane, Theodor Lundberg, David J. Ibberson, Lisa A. Ibberson, Louis Hutin, Benoit Bertrand, Nadia Stelmashenko, Jason W. A. Robinson, Maud Vinet, Ashwin A. Seshia, and M. Fernando Gonzalez-Zalba
Phys. Rev. Lett. 128, 197701 – Published 10 May 2022
Physics logo See synopsis: Parametric Amplification for Silicon Quantum Devices
PDFHTMLExport Citation

Abstract

Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the quantum capacitance arising in electronic two-level systems (the dual of Josephson inductance) can provide an alternative dissipationless nonlinear element for parametric amplification. We experimentally demonstrate phase-sensitive parametric amplification using a QD-reservoir electron transition in a CMOS nanowire split-gate transistor embedded in a 1.8 GHz superconducting lumped-element microwave cavity, achieving parametric gains of 3 to +3dB, limited by Sisyphus dissipation. Using a semiclassical model, we find an optimized design within current technological capabilities could achieve gains and bandwidths comparable to JPAs, while providing complementary specifications with respect to integration in semiconductor platforms or operation at higher magnetic fields.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 2 December 2021
  • Accepted 30 March 2022

DOI:https://doi.org/10.1103/PhysRevLett.128.197701

© 2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

synopsis

Key Image

Parametric Amplification for Silicon Quantum Devices

Published 10 May 2022

A new design based on the quantum capacitance of a silicon quantum dot could enable scalable, high-fidelity qubit readout.

See more in Physics

Authors & Affiliations

Laurence Cochrane1,2,*, Theodor Lundberg3,4, David J. Ibberson2, Lisa A. Ibberson4, Louis Hutin5, Benoit Bertrand5, Nadia Stelmashenko6, Jason W. A. Robinson6, Maud Vinet5, Ashwin A. Seshia1, and M. Fernando Gonzalez-Zalba2,†

  • 1Nanoscience Centre, Department of Engineering, University of Cambridge, Cambridge CB3 0FF, United Kingdom
  • 2Quantum Motion Technologies, Windsor House, Cornwall Road, Harrogate HG1 2PW, United Kingdom
  • 3Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 4Hitachi Cambridge Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 5CEA/LETI-MINATEC, CEA-Grenoble, 38000 Grenoble, France
  • 6Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

  • *olc22@cam.ac.uk
  • fernando@quantummotion.tech

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 128, Iss. 19 — 13 May 2022

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×