Identification of a Telecom Wavelength Single Photon Emitter in Silicon

Péter Udvarhelyi, Bálint Somogyi, Gergő Thiering, and Adam Gali
Phys. Rev. Lett. 127, 196402 – Published 5 November 2021
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Abstract

We identify the exact microscopic structure of the G photoluminescence center in silicon by first-principles calculations with including a self-consistent many-body perturbation method, which is a telecommunication wavelength single photon source. The defect constitutes of CsCi carbon impurities in its CsSiiCs configuration in the neutral charge state, where s and i stand for the respective substitutional and interstitial positions in the Si lattice. We reveal that the observed fine structure of its optical signals originates from the athermal rotational reorientation of the defect. We attribute the monoclinic symmetry reported in optically detected magnetic resonance measurements to the reduced tunneling rate at very low temperatures. We discuss the thermally activated motional averaging of the defect properties and the nature of the qubit state.

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  • Received 11 June 2021
  • Revised 10 August 2021
  • Accepted 6 October 2021

DOI:https://doi.org/10.1103/PhysRevLett.127.196402

© 2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Péter Udvarhelyi1, Bálint Somogyi1, Gergő Thiering1, and Adam Gali1,2,*

  • 1Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary
  • 2Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary

  • *Corresponding author. gali.adam@wigner.hu

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Issue

Vol. 127, Iss. 19 — 5 November 2021

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