Abstract
Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strain thin film by an above-band-gap ultrafast optical pulse changes the tilt angle that domain walls form with respect to the substrate-film interface. The dynamics of the changes are apparent in time-resolved synchrotron x-ray scattering studies of the domain diffuse scattering. Tilting occurs at 298 K, a temperature at which the and domain phases coexist but is absent at 343 K in the better ordered single-phase regime. Phase coexistence at 298 K leads to increased domain-wall charge density, and thus a larger screening effect than in the single-phase regime. The screening mechanism points to new directions for the manipulation of nanoscale ferroelectricity.
- Received 15 August 2020
- Accepted 25 June 2021
DOI:https://doi.org/10.1103/PhysRevLett.127.097402
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