Metal-Insulator Transition and Emergent Gapped Phase in the Surface-Doped 2D Semiconductor 2HMoTe2

T. T. Han, L. Chen, C. Cai, Z. G. Wang, Y. D. Wang, Z. M. Xin, and Y. Zhang
Phys. Rev. Lett. 126, 106602 – Published 12 March 2021
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Abstract

Artificially created two-dimensional (2D) interfaces or structures are ideal for seeking exotic phase transitions due to their highly tunable carrier density and interfacially enhanced many-body interactions. Here, we report the discovery of a metal-insulator transition (MIT) and an emergent gapped phase in the metal-semiconductor interface that is created in 2HMoTe2 via alkali-metal deposition. Using angle-resolved photoemission spectroscopy, we found that the electron-phonon coupling is strong at the interface as characterized by a clear observation of replica shake-off bands. Such strong electron-phonon coupling interplays with disorder scattering, leading to an Anderson localization of polarons which could explain the MIT. The domelike emergent gapped phase could then be attributed to a polaron extended state or phonon-mediated superconductivity. Our results demonstrate the capability of alkali-metal deposition as an effective method to enhance the many-body interactions in 2D semiconductors. The surface-doped 2HMoTe2 is a promising candidate for realizing polaronic insulator and high-Tc superconductivity.

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  • Received 21 July 2020
  • Accepted 17 February 2021

DOI:https://doi.org/10.1103/PhysRevLett.126.106602

© 2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

T. T. Han1, L. Chen1, C. Cai1, Z. G. Wang1, Y. D. Wang1, Z. M. Xin1, and Y. Zhang1,2,*

  • 1International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
  • 2Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

  • *yzhang85@pku.edu.cn

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Vol. 126, Iss. 10 — 12 March 2021

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