Abstract
Low-dimensional electronic systems such as silicon nanowires exhibit weak screening which is detrimental to the performance and scalability of nanodevices, e.g., tunnel field-effect transistors. By atomistic quantum transport simulations, we show how bound charges can be engineered at interfaces of Si and low- oxides to strengthen screening. To avoid compromising gate control, low- and high- oxides are used in conjunction. In Si nanowire tunnel field-effect transistors, we demonstrate that bound charge engineering increases the on-state current by orders of magnitude, and the combination of oxides yields minimal subthreshold swing. We conclude that the proposed bound-charge engineering paves a way toward improved low-power transistors.
- Received 10 July 2020
- Accepted 27 October 2020
DOI:https://doi.org/10.1103/PhysRevLett.125.247704
© 2020 American Physical Society
Physics Subject Headings (PhySH)
synopsis
Harnessing Bound Charge in Semiconductors
Published 8 December 2020
By controlling the bound charge in a nanowire transistor, researchers hope to improve the performance of these semiconductor devices.
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