Local Disorder-Induced Elevation of Intrinsic Anomalous Hall Conductance in an Electron-Doped Magnetic Weyl Semimetal

Jianlei Shen, Qiushi Yao, Qingqi Zeng, Hongyi Sun, Xuekui Xi, Guangheng Wu, Wenhong Wang, Baogen Shen, Qihang Liu, and Enke Liu
Phys. Rev. Lett. 125, 086602 – Published 20 August 2020
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Abstract

Topological materials are expected to show distinct transport signatures owing to their unique band-inversion characteristic and band-crossing points. However, the intentional modulation of such topological responses through experimentally feasible means has yet to be explored in depth. Here, an unusual elevation of the anomalous Hall effect (AHE) is obtained in electron (Ni)-doped magnetic Weyl semimetals Co3xNixSn2S2, showing peak values in the anomalous Hall-conductivity, Hall-angle, and Hall-factor at a relatively low doping level of x=0.11. The separation of intrinsic and extrinsic contributions using the TYJ scaling model indicates that such a significant enhancement is dominated by the intrinsic mechanism of the electronic Berry curvature. Theoretical calculations reveal that compared with the Fermi-level shifting from electron filling, a usually overlooked effect of doping, that is, local disorder, imposes a striking effect on broadening of the bands and narrowing of the inverted gap, thus resulting in an elevation of the integrated Berry curvature. Our results not only realize an enhancement of the AHE in a magnetic Weyl semimetal, but also provide a practical design principle for modulating the bands and transport properties in topological materials by exploiting the local disorder effect from doping.

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  • Received 16 February 2020
  • Revised 14 May 2020
  • Accepted 10 July 2020

DOI:https://doi.org/10.1103/PhysRevLett.125.086602

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Jianlei Shen1,2,*, Qiushi Yao3,*, Qingqi Zeng1,2, Hongyi Sun3, Xuekui Xi1, Guangheng Wu1, Wenhong Wang1,4, Baogen Shen1,5, Qihang Liu3,6,7,†, and Enke Liu1,4,‡

  • 1State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Shenzhen Institute for Quantum Science and Technology and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
  • 4Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
  • 5Institute of Rare Earths, Chinese Academy of Sciences, Jiangxi 341000, China
  • 6Guangdong Provincial Key Laboratory for Computational Science and Material Design, Southern University of Science and Technology, Shenzhen 518055, China
  • 7Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China

  • *These authors contributed equally to this work.
  • liuqh@sustech.edu.cn
  • ekliu@iphy.ac.cn

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Issue

Vol. 125, Iss. 8 — 21 August 2020

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