Abstract
We demonstrate formation of the ideal split-vacancy configuration of the Sn-vacancy center upon implantation into natural diamond. Using emission channeling following low fluence implantation (, 60 keV) at the ISOLDE facility at CERN, we directly identified and quantified the atomic configurations of the Sn-related centers. Our data show that the split-vacancy configuration is formed immediately upon implantation with a surprisingly high efficiency of . Upon thermal annealing at of Sn is found in the ideal bond-center position. Photoluminescence revealed the characteristic line at 621 nm, with an extraordinarily narrow ensemble linewidth (2.3 nm) of near-perfect Lorentzian shape. These findings further establish the center as a promising candidate for single photon emission applications, since, in addition to exceptional optical properties, it also shows a remarkably simple structural formation mechanism.
- Received 6 November 2019
- Revised 28 May 2020
- Accepted 1 July 2020
DOI:https://doi.org/10.1103/PhysRevLett.125.045301
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