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Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga

A. E. F. de Jong, V. Vonk, M. Boćkowski, I. Grzegory, V. Honkimäki, and E. Vlieg
Phys. Rev. Lett. 124, 086101 – Published 24 February 2020

Abstract

The equilibrium atomic interface structure between Ga and GaN(0001) is shown to contain substrate surface vacancies followed by substrate-induced layering and preferential lateral ordering in the liquid. The uncovered presence of point defects, in the form of vacancies at both sides of the solid-liquid interface, is an important structural feature which governs the local physical properties. Our x-ray diffraction study reveals that the layering is very stable and persists up to a temperature of 1123 K and a nitrogen pressure of 32 bar. The Ga layer spacing agrees remarkably well with the Friedel oscillation period for this system.

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  • Received 16 August 2019
  • Accepted 29 January 2020

DOI:https://doi.org/10.1103/PhysRevLett.124.086101

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

A. E. F. de Jong1,2, V. Vonk3,*, M. Boćkowski4, I. Grzegory4, V. Honkimäki2, and E. Vlieg1,†

  • 1Radboud University, Institute for Molecules and Materials, Heyendaalseweg 135, 6525AJ Nijmegen, Netherlands
  • 2European Synchrotron Radiation Facility, CS 40220, F-38043, Grenoble Cedex 9, France
  • 3DESY NanoLaboratory, Deutsches Elektronen-Synchrotron (DESY), Notkestraße 85, D-22607 Hamburg, Germany
  • 4Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland

  • *Corresponding author. vedran.vonk@desy.de
  • Corresponding author. e.vlieg@science.ru.nl

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Issue

Vol. 124, Iss. 8 — 28 February 2020

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