Dangling Bonds in Hexagonal Boron Nitride as Single-Photon Emitters

Mark E. Turiansky, Audrius Alkauskas, Lee C. Bassett, and Chris G. Van de Walle
Phys. Rev. Lett. 123, 127401 – Published 16 September 2019

Abstract

Hexagonal boron nitride has been found to host color centers that exhibit single-photon emission, but the microscopic origin of these emitters is unknown. We propose boron dangling bonds as the likely source of the observed single-photon emission around 2 eV. An optical transition where an electron is excited from a doubly occupied boron dangling bond to a localized B pz state gives rise to a zero-phonon line of 2.06 eV and emission with a Huang-Rhys factor of 2.3. This transition is linearly polarized with the absorptive and emissive dipole aligned. Because of the energetic position of the states within the band gap, indirect excitation through the conduction band will occur for sufficiently large excitation energies, leading to the misalignment of the absorptive and emissive dipoles seen in experiment. Our calculations predict a singlet ground state and the existence of a metastable triplet state, in agreement with experiment.

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  • Received 22 March 2019

DOI:https://doi.org/10.1103/PhysRevLett.123.127401

© 2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Mark E. Turiansky1, Audrius Alkauskas2, Lee C. Bassett3, and Chris G. Van de Walle4

  • 1Department of Physics, University of California, Santa Barbara, California 93106-9530, USA
  • 2Center for Physical Sciences and Technology (FTMC), Vilnius LT-10257, Lithuania
  • 3Quantum Engineering Laboratory, Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
  • 4Materials Department, University of California, Santa Barbara, California 93106-5050, USA

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Issue

Vol. 123, Iss. 12 — 20 September 2019

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