Abstract
We developed novel techniques to fabricate atomically thin van der Waals heterostructures down to two unit cells while maintaining a transition temperature close to the bulk, and carry out magnetotransport measurements on these van der Waals devices. We find a double sign change of the Hall resistance as in the bulk system, spanning both below and above . Further, we observe a drastic enlargement of the region of sign reversal in the temperature-magnetic field phase diagram with decreasing thickness of the device. We obtain quantitative agreement between experimental and the predictions of the vortex dynamics-based description of Hall effect in high-temperature superconductors both above and below .
- Received 20 September 2018
- Revised 31 January 2019
DOI:https://doi.org/10.1103/PhysRevLett.122.247001
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