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Unveiling the Superconducting Mechanism of Ba0.51K0.49BiO3

C. H. P. Wen, H. C. Xu, Q. Yao, R. Peng, X. H. Niu, Q. Y. Chen, Z. T. Liu, D. W. Shen, Q. Song, X. Lou, Y. F. Fang, X. S. Liu, Y. H. Song, Y. J. Jiao, T. F. Duan, H. H. Wen, P. Dudin, G. Kotliar, Z. P. Yin, and D. L. Feng
Phys. Rev. Lett. 121, 117002 – Published 13 September 2018
Physics logo See Synopsis: Bismuthates Are Surprisingly Conventional
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Abstract

The mechanism of high superconducting transition temperatures (Tc) in bismuthates remains under debate despite more than 30 years of extensive research. Our angle-resolved photoemission spectroscopy studies on Ba0.51K0.49BiO3 reveal an unexpectedly 34% larger bandwidth than in conventional density functional theory calculations. This can be reproduced by calculations that fully account for long-range Coulomb interactions—the first direct demonstration of bandwidth expansion due to the Fock exchange term, a long-accepted and yet uncorroborated fundamental effect in many body physics.Furthermore, we observe an isotropic superconducting gap with 2Δ0/kBTc=3.51±0.05, and strong electron-phonon interactions with a coupling constant λ1.3±0.2. These findings solve a long-standing mystery—Ba0.51K0.49BiO3 is an extraordinary Bardeen-Cooper-Schrieffer superconductor, where long-range Coulomb interactions expand the bandwidth, enhance electron-phonon coupling, and generate the high Tc. Such effects will also be critical for finding new superconductors.

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  • Received 16 March 2018
  • Revised 8 July 2018

DOI:https://doi.org/10.1103/PhysRevLett.121.117002

© 2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Synopsis

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Bismuthates Are Surprisingly Conventional

Published 13 September 2018

Photoemission experiments challenge the long-held belief that the high-temperature superconductivity of certain bismuth oxides is of the unconventional type.

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Authors & Affiliations

C. H. P. Wen1, H. C. Xu1,*, Q. Yao1, R. Peng1, X. H. Niu1, Q. Y. Chen2, Z. T. Liu3,4, D. W. Shen3,4, Q. Song1, X. Lou1, Y. F. Fang1, X. S. Liu1, Y. H. Song1, Y. J. Jiao5,6, T. F. Duan5,6, H. H. Wen5,6, P. Dudin7, G. Kotliar8, Z. P. Yin9,†, and D. L. Feng1,6,‡

  • 1State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200438, People’s Republic of China
  • 2Science and Technology on Surface Physics and Chemistry Laboratory, Mianyang 621908, China
  • 3CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China
  • 4State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
  • 5National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • 6Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • 7Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE, United Kingdom
  • 8Department of Physics, Rutgers University, Piscataway, New Jersey 08854, USA
  • 9Department of Physics and Center for Advanced Quantum Studies, Beijing Normal University, Beijing 100875, China

  • *xuhaichao@fudan.edu.cn
  • yinzhiping@bnu.edu.cn
  • dlfeng@fudan.edu.cn

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Issue

Vol. 121, Iss. 11 — 14 September 2018

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