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Spin-Current-Controlled Modulation of the Magnon Spin Conductance in a Three-Terminal Magnon Transistor

L. J. Cornelissen, J. Liu, B. J. van Wees, and R. A. Duine
Phys. Rev. Lett. 120, 097702 – Published 2 March 2018
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Abstract

Efficient manipulation of magnon spin transport is crucial for developing magnon-based spintronic devices. In this Letter, we provide proof of principle of a method for modulating the diffusive transport of thermal magnons in an yttrium iron garnet channel between injector and detector contacts. The magnon spin conductance of the channel is altered by increasing or decreasing the magnon chemical potential via spin Hall injection of magnons by a third modulator electrode. We obtain a modulation efficiency of 1.6%/mA at T=250K. Finite element modeling shows that this could be increased to well above 10%/mA by reducing the thickness of the channel, providing interesting prospects for the development of thermal-magnon-based logic circuits.

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  • Received 17 October 2017

DOI:https://doi.org/10.1103/PhysRevLett.120.097702

© 2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

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Key Image

A Trio of Magnon Transistors

Published 2 March 2018

Three new transistors for spin-based currents may lead to a new type of circuitry that is faster and more efficient than traditional electronics.

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Authors & Affiliations

L. J. Cornelissen*, J. Liu, and B. J. van Wees

  • Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands

R. A. Duine

  • Institute for Theoretical Physics and Center for Extreme Matter and Emergent Phenomena, Utrecht University, Leuvenlaan 4, 3584 CE Utrecht, The Netherlands and Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

  • *l.j.cornelissen@rug.nl

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Issue

Vol. 120, Iss. 9 — 2 March 2018

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