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Realization of an Electrically Tunable Narrow-Bandwidth Atomically Thin Mirror Using Monolayer MoSe2

Patrick Back, Sina Zeytinoglu, Aroosa Ijaz, Martin Kroner, and Atac Imamoğlu
Phys. Rev. Lett. 120, 037401 – Published 18 January 2018
Physics logo See Synopsis: Reflectivity of Ultrathin Mirror Switches with Voltage
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Abstract

The advent of two-dimensional semiconductors, such as van der Waals heterostructures, propels new research directions in condensed matter physics and enables development of novel devices with unique functionalities. Here, we show experimentally that a monolayer of MoSe2 embedded in a charge controlled heterostructure can be used to realize an electrically tunable atomically thin mirror, which effects 87% extinction of an incident field that is resonant with its exciton transition. The corresponding maximum reflection coefficient of 41% is only limited by the ratio of the radiative decay rate to the nonradiative linewidth of exciton transition and is independent of incident light intensity up to 400W/cm2. We demonstrate that the reflectivity of the mirror can be drastically modified by applying a gate voltage that modifies the monolayer charge density. Our findings could find applications ranging from fast programable spatial light modulators to suspended ultralight mirrors for optomechanical devices.

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  • Received 12 July 2017
  • Revised 21 November 2017

DOI:https://doi.org/10.1103/PhysRevLett.120.037401

© 2018 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
Condensed Matter, Materials & Applied Physics

Synopsis

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Reflectivity of Ultrathin Mirror Switches with Voltage

Published 18 January 2018

Researchers designed an atomically thin mirror with electronically switchable reflectivity that could be useful in optoelectronic circuits.  

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Authors & Affiliations

Patrick Back, Sina Zeytinoglu, Aroosa Ijaz, Martin Kroner, and Atac Imamoğlu

  • Institute for Quantum Electronics, ETH Zürich, CH-8093 Zurich, Switzerland

See Also

Large Excitonic Reflectivity of Monolayer MoSe2 Encapsulated in Hexagonal Boron Nitride

Giovanni Scuri, You Zhou, Alexander A. High, Dominik S. Wild, Chi Shu, Kristiaan De Greve, Luis A. Jauregui, Takashi Taniguchi, Kenji Watanabe, Philip Kim, Mikhail D. Lukin, and Hongkun Park
Phys. Rev. Lett. 120, 037402 (2018)

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Issue

Vol. 120, Iss. 3 — 19 January 2018

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