Tunable Intrinsic Plasmons due to Band Inversion in Topological Materials

Furu Zhang, Jianhui Zhou, Di Xiao, and Yugui Yao
Phys. Rev. Lett. 119, 266804 – Published 29 December 2017
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Abstract

Band inversion has led to rich physical effects in both topological insulators and topological semimetals. It has been found that the inverted band structure with the Mexican-hat dispersion could enhance the interband correlation leading to a strong intrinsic plasmon excitation. Its frequency ranges from several meV to tens of meV and can be effectively tuned by the external fields. The electron-hole asymmetric term splits the peak of the plasmon excitation into double peaks. The fate and properties of this plasmon excitation can also act as a probe to characterize the topological phases even in lightly doped systems. We numerically demonstrate the impact of band inversion on plasmon excitations in magnetically doped thin films of three-dimensional strong topological insulators, V- or Cr-doped (Bi,Sb)2Te3, which support the quantum anomalous Hall states. Our work thus sheds some new light on the potential applications of topological materials in plasmonics.

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  • Received 10 October 2017

DOI:https://doi.org/10.1103/PhysRevLett.119.266804

© 2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Furu Zhang1, Jianhui Zhou2,3,*, Di Xiao2, and Yugui Yao1,†

  • 1Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
  • 2Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
  • 3Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China

  • *jianhuizhou1@gmail.com
  • ygyao@bit.edu.cn

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Issue

Vol. 119, Iss. 26 — 29 December 2017

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