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Strain-Gradient Position Mapping of Semiconductor Quantum Dots

P.-L. de Assis, I. Yeo, A. Gloppe, H. A. Nguyen, D. Tumanov, E. Dupont-Ferrier, N. S. Malik, E. Dupuy, J. Claudon, J.-M. Gérard, A. Auffèves, O. Arcizet, M. Richard, and J.-Ph. Poizat
Phys. Rev. Lett. 118, 117401 – Published 16 March 2017
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Abstract

We introduce a nondestructive method to determine the position of randomly distributed semiconductor quantum dots (QDs) integrated in a solid photonic structure. By setting the structure in an oscillating motion, we generate a large stress gradient across the QDs plane. We then exploit the fact that the QDs emission frequency is highly sensitive to the local material stress to map the position of QDs deeply embedded in a photonic wire antenna with an accuracy ranging from ±35nm down to ±1nm. In the context of fast developing quantum technologies, this technique can be generalized to different photonic nanostructures embedding any stress-sensitive quantum emitters.

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  • Received 23 September 2016

DOI:https://doi.org/10.1103/PhysRevLett.118.117401

© 2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Synopsis

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Straining After Quantum Dots

Published 16 March 2017

The positions of quantum dots inside a microstructure can be determined by monitoring how an applied strain affects the dots’ photoluminescence.  

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Authors & Affiliations

P.-L. de Assis1,2, I. Yeo1,3, A. Gloppe1, H. A. Nguyen1, D. Tumanov1, E. Dupont-Ferrier1, N. S. Malik3, E. Dupuy3, J. Claudon3, J.-M. Gérard3, A. Auffèves1, O. Arcizet1, M. Richard1, and J.-Ph. Poizat1,*

  • 1Institut NEEL, CNRS, Univ. Grenoble Alpes, France
  • 2Departamento de Física, Instituto de Ciências Exatas, Universidade Federal de Minas Gerais, Belo Horizonte, Brazil
  • 3INAC-PHELIQS, “Nanophysique et semiconducteurs” group, CEA, Univ. Grenoble Alpes, France

  • *Corresponding author. jean-philippe.poizat@neel.cnrs.fr

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Issue

Vol. 118, Iss. 11 — 17 March 2017

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