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Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique

Jianfeng Bao, Wataru Norimatsu, Hiroshi Iwata, Keita Matsuda, Takahiro Ito, and Michiko Kusunoki
Phys. Rev. Lett. 117, 205501 – Published 8 November 2016
Physics logo See Synopsis: A New Way to Make Graphene
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Abstract

Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry.

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  • Received 15 April 2016

DOI:https://doi.org/10.1103/PhysRevLett.117.205501

© 2016 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
  1. Physical Systems
Condensed Matter, Materials & Applied Physics

Synopsis

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A New Way to Make Graphene

Published 8 November 2016

The addition of a rapid-cooling step to the epitaxial growth of graphene on silicon carbide can yield higher-quality graphene sheets.

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Authors & Affiliations

Jianfeng Bao1,†, Wataru Norimatsu2,*, Hiroshi Iwata2, Keita Matsuda2, Takahiro Ito3, and Michiko Kusunoki1

  • 1Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan
  • 2Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
  • 3Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8603, Japan

  • *To whom all correspondence should be addressed. w_norimatsu@imass.nagoya-u.ac.jp
  • Present address: College of Physics and Electronics Information, Inner Mongolia Universityfor Nationalities, Tongliao 028043, China.

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Issue

Vol. 117, Iss. 20 — 11 November 2016

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