Abstract
Reversible ferroelectric domain (FD) manipulation with a high spatial resolution is critical for memory storage devices based on thin film ferroelectric materials. FD can be manipulated using techniques that apply heat, mechanical stress, or electric bias. However, these techniques have some drawbacks. Here we propose to use an electron beam with an omnidirectional electric field as a tool for erasable stable ferroelectric nanodomain manipulation. Our results suggest that local accumulation of charges contributes to the local electric field that determines domain configurations.
- Received 6 December 2015
DOI:https://doi.org/10.1103/PhysRevLett.117.027601
© 2016 Published by the American Physical Society
Physics Subject Headings (PhySH)
Focus
Tiny Digital Bits in Ferroelectric Material
Published 8 July 2016
Electrons hitting a ferroelectric material can produce a single digital bit 100 times smaller than the bits in today’s commercial memories.
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