Inhibiting Klein Tunneling in a Graphene pn Junction without an External Magnetic Field

Hyungju Oh, Sinisa Coh, Young-Woo Son, and Marvin L. Cohen
Phys. Rev. Lett. 117, 016804 – Published 30 June 2016
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Abstract

We study by first-principles calculations a densely packed island of organic molecules (F4TCNQ) adsorbed on graphene. We find that with electron doping the island naturally forms a pn junction in the graphene sheet. For example, a doping level of 3×1013electronspercm2 results in a pn junction with an 800 meV electrostatic potential barrier. Unlike in a conventional pn junction in graphene, in the case of the junction formed by an adsorbed organic molecular island we expect that the Klein tunneling is inhibited, even without an applied external magnetic field. Here Klein tunneling is inhibited by the ferromagnetic order that spontaneously occurs in the molecular island upon doping. We estimate that the magnetic barrier in the graphene sheet is around 10 mT.

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  • Received 17 February 2016

DOI:https://doi.org/10.1103/PhysRevLett.117.016804

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Hyungju Oh1,2,*, Sinisa Coh1,2, Young-Woo Son1,2,3, and Marvin L. Cohen1,2

  • 1Department of Physics, University of California, Berkeley, California 94720, USA
  • 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 3Korea Institute for Advanced Study, Hoegiro 85, Seoul 02455, Korea

  • *xtom97@hanmail.net

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Vol. 117, Iss. 1 — 1 July 2016

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