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Strongly Anisotropic Ballistic Magnetoresistance in Compact Three-Dimensional Semiconducting Nanoarchitectures

Ching-Hao Chang, Jeroen van den Brink, and Carmine Ortix
Phys. Rev. Lett. 113, 227205 – Published 26 November 2014
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Abstract

We establish theoretically that in nonmagnetic semiconducting bilayer or multilayer thin film systems rolled up into compact quasi-one-dimensional nanoarchitectures, the ballistic magnetoresistance is very anisotropic: conductances depend strongly on the direction of an externally applied magnetic field. This phenomenon originates from the curved open geometry of rolled-up nanotubes, which leads to a tunability of the number of quasi-one-dimensional magnetic subbands crossing the Fermi energy. The experimental significance of this phenomenon is illustrated by a sizable anisotropy that scales with the inverse of the winding number, and persists up to a critical temperature that can be strongly enhanced by increasing the strength of the external magnetic field or the characteristic radius of curvature, and can reach room temperature.

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  • Received 8 August 2014

DOI:https://doi.org/10.1103/PhysRevLett.113.227205

© 2014 American Physical Society

Authors & Affiliations

Ching-Hao Chang1,2,*, Jeroen van den Brink1,3, and Carmine Ortix1

  • 1Institute for Theoretical Solid State Physics, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
  • 2Department of Physics, National Tsing Hua University, Hsinchu 30043, Taiwan
  • 3Department of Physics, Technical University Dresden, D-1062 Dresden, Germany

  • *cutygo@gmail.com

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Issue

Vol. 113, Iss. 22 — 28 November 2014

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