Abstract
We study the electronic screening mechanisms of the effective Coulomb on-site repulsion in hole-doped compared to undoped using polarization dependent high-resolution resonant inelastic x-ray scattering at Cu edges. By measuring the energy of the effective Coulomb on-site repulsion and the spin excitations, we estimate superexchange and hopping matrix element energies along rungs and legs, respectively. Interestingly, hole doping locally screens the Coulomb on-site repulsion reducing it by as much as 25%. We suggest that the increased ratio of the electronic kinetic to the electronic correlation energy contributes to the local superexchange mediated pairing between holes.
- Received 7 January 2014
DOI:https://doi.org/10.1103/PhysRevLett.113.067001
© 2014 American Physical Society