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Relative Refractory Period in an Excitable Semiconductor Laser

F. Selmi, R. Braive, G. Beaudoin, I. Sagnes, R. Kuszelewicz, and S. Barbay
Phys. Rev. Lett. 112, 183902 – Published 7 May 2014
Physics logo See Synopsis: Semiconductor Lasers Get Nervy

Abstract

We report on experimental evidence of neuronlike excitable behavior in a micropillar laser with saturable absorber. We show that under a single pulsed perturbation the system exhibits subnanosecond response pulses and analyze the role of the laser bias pumping. Under a double pulsed excitation we study the absolute and relative refractory periods, similarly to what can be found in neural excitability, and interpret the results in terms of a dynamical inhibition mediated by the carrier dynamics. These measurements shed light on the analogy between optical and biological neurons and pave the way to fast spike-time coding based optical systems with a speed several orders of magnitude faster than their biological or electronic counterparts.

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  • Received 19 December 2013

DOI:https://doi.org/10.1103/PhysRevLett.112.183902

© 2014 American Physical Society

Synopsis

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Semiconductor Lasers Get Nervy

Published 7 May 2014

Semiconductor lasers can exhibit characteristics of nerve cells, making them potentially useful for simulating biological neural networks.

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Authors & Affiliations

F. Selmi, R. Braive*, G. Beaudoin, I. Sagnes, R. Kuszelewicz, and S. Barbay

  • Laboratoire de Photonique et de Nanostructures, LPN-CNRS UPR20, Route de Nozay, 91460 Marcoussis, France

  • *Also at Université Paris Diderot, 5 rue Thomas-Mann, 75013 Paris, France.
  • sylvain.barbay@lpn.cnrs.fr

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Issue

Vol. 112, Iss. 18 — 9 May 2014

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