Abstract
We demonstrate a link between the growth process, the stoichiometry of , and the interfacial electrical properties of heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown at results in a 2 and 7 order-of-magnitude change in the 300 and 2 K sheet resistance, respectively, with highly conducting states occurring only in La-deficient or Al-excess films. Further reducing the growth pressure results in an increase of the carrier density and a dramatic change in mobility. We discuss the relative contributions of intrinsic and extrinsic effects in controlling the physical properties of this widely studied system.
- Received 29 December 2012
DOI:https://doi.org/10.1103/PhysRevLett.110.196804
© 2013 American Physical Society
Synopsis
Chemistry of an Interface
Published 9 May 2013
Experiments pinpoint the effects of lanthanum composition on the conducting properties of the interface.
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