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d0 Ferromagnetic Interface between Nonmagnetic Perovskites

R. Oja, M. Tyunina, L. Yao, T. Pinomaa, T. Kocourek, A. Dejneka, O. Stupakov, M. Jelinek, V. Trepakov, S. van Dijken, and R. M. Nieminen
Phys. Rev. Lett. 109, 127207 – Published 20 September 2012
Physics logo See Synopsis: Oxides Combine to Create Magnets

Abstract

We use computational and experimental methods to study d0 ferromagnetism at a charge-imbalanced interface between two perovskites. In SrTiO3/KTaO3 superlattice calculations, the charge imbalance introduces holes in the SrTiO3 layer, inducing a d0 ferromagnetic half-metallic 2D hole gas at the interface oxygen 2p orbitals. The charge imbalance overrides doping by vacancies at realistic concentrations. Varying the constituent materials shows ferromagnetism to be a general property of hole-type d0 perovskite interfaces. Atomically sharp epitaxial d0 SrTiO3/KTaO3, SrTiO3/KNbO3, and SrTiO3/NaNbO3 interfaces are found to exhibit ferromagnetic hysteresis at room temperature. We suggest that the behavior is due to the high density of states and exchange coupling at the oxygen t1g band in comparison with the more studied d band t2g symmetry electron gas.

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  • Received 4 June 2012

DOI:https://doi.org/10.1103/PhysRevLett.109.127207

© 2012 American Physical Society

Synopsis

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Oxides Combine to Create Magnets

Published 20 September 2012

New research has identified a rare form of magnetism at the interface between two different oxide compounds.

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Authors & Affiliations

R. Oja1, M. Tyunina2,3, L. Yao4, T. Pinomaa1, T. Kocourek3, A. Dejneka3, O. Stupakov3, M. Jelinek3, V. Trepakov3, S. van Dijken4, and R. M. Nieminen1

  • 1COMP Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 11100, 00076 Aalto, Helsinki, Finland
  • 2Microelectronics and Materials Physics Laboratories, University of Oulu, P.O. Box 4500, 90014 Oulun yliopisto, Finland
  • 3Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic
  • 4NanoSpin, Department of Applied Physics, Aalto University, P.O. Box 15100, 00076 Aalto, Helsinki, Finland

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Issue

Vol. 109, Iss. 12 — 21 September 2012

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