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Detection of a Large Valley-Orbit Splitting in Silicon with Two-Donor Spectroscopy

B. Roche, E. Dupont-Ferrier, B. Voisin, M. Cobian, X. Jehl, R. Wacquez, M. Vinet, Y.-M. Niquet, and M. Sanquer
Phys. Rev. Lett. 108, 206812 – Published 17 May 2012
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Abstract

We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO2 interface and electric field in the wire show that the values found are consistent with the device geometry.

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  • Received 6 January 2012

DOI:https://doi.org/10.1103/PhysRevLett.108.206812

© 2012 American Physical Society

Synopsis

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Two Donors Are Better Than One

Published 17 May 2012

Pairs of donor atoms read out the energy levels in a silicon nanowire.

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Authors & Affiliations

B. Roche1, E. Dupont-Ferrier1, B. Voisin1, M. Cobian2, X. Jehl1, R. Wacquez1,3, M. Vinet3, Y.-M. Niquet2, and M. Sanquer1,*

  • 1SPSMS, UMR-E CEA / UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble, France
  • 2SPMM, UMR-E CEA / UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble, France
  • 3CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France

  • *marc.sanquer@cea.fr

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Issue

Vol. 108, Iss. 20 — 18 May 2012

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