Abstract
A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.
- Received 20 December 2010
DOI:https://doi.org/10.1103/PhysRevLett.106.157203
© 2011 American Physical Society
Synopsis
Switched on ferroelectrics
Published 13 April 2011
Combining a manganite electrode with a ferroelectric tunnel junction could show an impressive tunneling effect.
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