Abstract
We predict theoretically novel two-dimensional interface ferromagnetism at using first-principles calculations, where the interface is employed as an ordered structure of spin sites instead of point defects. Although N dangling bonds are apparently saturated, interfacial states exhibit spin polarization. Hund’s coupling of the two N orbitals as well as low density of states at the Fermi energy contribute to strong band ferromagnetism. Furthermore, first-principles electron transport calculations demonstrate that this interfacial spin polarization is responsible for quantum spin transport. The magnetization can be controlled by applied gate bias voltages.
- Received 22 September 2010
DOI:https://doi.org/10.1103/PhysRevLett.106.047201
© 2011 American Physical Society