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Engineering the Electronic Band Structure for Multiband Solar Cells

N. López, L. A. Reichertz, K. M. Yu, K. Campman, and W. Walukiewicz
Phys. Rev. Lett. 106, 028701 – Published 10 January 2011
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Abstract

Using the unique features of the electronic band structure of GaNxAs1x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the band anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

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  • Received 12 July 2010

DOI:https://doi.org/10.1103/PhysRevLett.106.028701

© 2011 The American Physical Society

Synopsis

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Band together

Published 10 January 2011

Semiconductor alloys offer one way to improve the efficiency of solar cells.

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Authors & Affiliations

N. López1, L. A. Reichertz1,2, K. M. Yu1, K. Campman3, and W. Walukiewicz1,2

  • 1Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
  • 2Rose Street Labs Energy, 3701 E. University Drive, Phoenix, Arizona 85034, USA
  • 3Sumika Electronic Materials, Inc., 3832 E. Watkins Street, Phoenix, Arizona 85034, USA

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Issue

Vol. 106, Iss. 2 — 14 January 2011

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