Abstract
The unusual optoelectronic properties of chalcopyrite grain boundaries (GBs) have become the subject of an intense debate in recent years. In this work we investigate the defect density at GBs of by scanning tunneling spectroscopy. Contrary to our expectation, our results give evidence for a reduced density of deep level defects and point to an increased density of defect levels in resonance with the lower conduction band at GBs. Our findings imply low recombination activity at GBs, and thus can explain the low impact of GBs on the efficiency of chalcopyrite based solar cells.
- Received 23 December 2009
DOI:https://doi.org/10.1103/PhysRevLett.105.116802
© 2010 The American Physical Society