Controllable Driven Phase Transitions in Fractional Quantum Hall States in Bilayer Graphene

Vadim M. Apalkov and Tapash Chakraborty
Phys. Rev. Lett. 105, 036801 – Published 13 July 2010

Abstract

Here we report from our theoretical studies that, in biased bilayer graphene, one can induce phase transitions from an incompressible fractional quantum Hall state to a compressible state by tuning the band gap at a given electron density. The nature of such phase transitions is different for weak and strong interlayer coupling. Although for strong coupling more levels interact there is a lesser number of transitions than for the weak coupling case. The intriguing scenario of tunable phase transitions in the fractional quantum Hall states is unique to bilayer graphene and has never before existed in conventional semiconductor systems.

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  • Received 24 February 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.036801

©2010 American Physical Society

Authors & Affiliations

Vadim M. Apalkov

  • Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA

Tapash Chakraborty*

  • Department of Physics and Astronomy, University of Manitoba, Winnipeg, Canada R3T 2N2

  • *tapash@physics.umanitoba.ca

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Vol. 105, Iss. 3 — 16 July 2010

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